Invention Grant
- Patent Title: Semiconductor manufacturing apparatus and manufacturing method of semiconductor device
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Application No.: US16811241Application Date: 2020-03-06
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Publication No.: US11508574B2Publication Date: 2022-11-22
- Inventor: Hiroyasu Iimori
- Applicant: Kioxia Corporation
- Applicant Address: JP Minato-ku
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2019-158135 20190830
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/02

Abstract:
A semiconductor manufacturing apparatus according to an embodiment includes: a stage to have a plurality of pins to hold a semiconductor substrate having a first surface on which a film to be etched is formed and a second surface positioned on an opposite side to the first surface; a nozzle to eject a liquid chemical toward the first surface of the semiconductor substrate from above the stage; and an optical measurer to radiate light toward the second surface of the semiconductor substrate from a side of the stage during ejection of the liquid chemical, and to measure a displacement amount of the semiconductor substrate based on a state of reception of light reflected on the second surface.
Public/Granted literature
- US20210066076A1 SEMICONDUCTOR MANUFACTURING APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2021-03-04
Information query
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