Invention Grant
- Patent Title: Integrated circuit and method of manufacturing same
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Application No.: US16936249Application Date: 2020-07-22
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Publication No.: US11508661B2Publication Date: 2022-11-22
- Inventor: Pochun Wang , Ting-Wei Chiang , Chih-Ming Lai , Hui-Zhong Zhuang , Jung-Chan Yang , Ru-Gun Liu , Ya-Chi Chou , Yi-Hsiung Lin , Yu-Xuan Huang , Yu-Jung Chang , Guo-Huei Wu , Shih-Ming Chang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/535 ; H01L21/768 ; H01L27/088 ; H01L27/092 ; H01L21/8238 ; G06F30/39 ; G06F30/392

Abstract:
An integrated circuit includes a set of active regions in a substrate, a first set of conductive structures, a shallow trench isolation (STI) region, a set of gates and a first set of vias. The set of active regions extend in a first direction and is located on a first level. The first set of conductive structures and the STI region extend in at least the first direction or a second direction, is located on the first level, and is between the set of active regions. The STI region is between the set of active regions and the first set of conductive structures. The set of gates extend in the second direction and overlap the first set of conductive structures. The first set of vias couple the first set of conductive structures to the set of gates.
Public/Granted literature
- US20200350250A1 INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING SAME Public/Granted day:2020-11-05
Information query
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