Invention Grant
- Patent Title: Semiconductor package for high-speed data transmission and manufacturing method thereof
-
Application No.: US16818826Application Date: 2020-03-13
-
Publication No.: US11508677B2Publication Date: 2022-11-22
- Inventor: Huan-Neng Chen , Wen-Shiang Liao
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT
- Agent Anthony King
- Main IPC: H01L23/66
- IPC: H01L23/66 ; H01L21/48 ; H01L23/538 ; H01L23/00 ; H01P3/12 ; H01L23/498 ; H01L25/00 ; H01L25/18

Abstract:
A semiconductor structure and a method of forming the same are provided. A method of manufacturing the semiconductor structure includes: providing a substrate; depositing a first dielectric layer over the substrate; attaching a waveguide to the first dielectric layer; depositing a second dielectric layer to laterally surround the waveguide; and forming a first conductive member and a second conductive member over the second dielectric layer and the waveguide, wherein the first conductive member and the second conductive member are in contact with the waveguide. The waveguide is configured to transmit an electromagnetic signal between the first conductive member and the second conductive member.
Public/Granted literature
- US20210066219A1 SEMICONDUCTOR PACKAGE FOR HIGH-SPEED DATA TRANSMISSION AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-03-04
Information query
IPC分类: