Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly LED chip structures with electrical overstress protection are disclosed. LED chip structures are disclosed that include built-in electrical overstress protection. An exemplary LED chip may include an active LED structure that is arranged as a primary light-emitting structure and a separate active LED structure that is arranged as an electrical overstress protection structure. The electrical overstress protection structure may be electrically connected in reverse relative to the primary light-emitting structure. In this manner, under normal operating conditions, forward current will flow through the primary light-emitting structure to generate desired light emissions, and during an electrical overstress event, reverse current may flow through the electrical overstress protection structure, thereby protecting the light-emitting structure from damage.