A memory cell arrangement is provided that may include: a plurality of electrode layers, wherein each of the plurality of electrode layers comprises a plurality of through holes, each of the plurality of through holes extending from a first surface to a second surface of a respective electrode layer; a plurality of electrode pillars, wherein each of the plurality of electrode pillars comprises a plurality of electrode portions, wherein each of the plurality of electrode portions is disposed within a corresponding one of the plurality of through holes; wherein the respective electrode layer and a respective electrode portion of the plurality of electrode portions form a first electrode and a second electrode of a capacitor and wherein at least one memory material portion is disposed in each of the plurality of through holes in a gap between the respective electrode layer and the respective electrode portion.