Invention Grant
- Patent Title: Silicon carbide semiconductor device and power converter
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Application No.: US16885319Application Date: 2020-05-28
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Publication No.: US11508840B2Publication Date: 2022-11-22
- Inventor: Shiro Hino , Yuichi Nagahisa , Koji Sadamatsu , Hideyuki Hatta , Kotaro Kawahara
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Xsensus LLP
- Priority: JPJP2017-242642 20171219
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/10 ; H01L29/16 ; H02P27/08
Abstract:
In SiC-MOSFETs including Schottky diodes, passage of a bipolar current to a second well region formed in a terminal portion sometimes reduces a breakdown voltage. In a SiC-MOSFET including Schottky diodes according to the present invention, the second well region formed in the terminal portion has a non-ohmic connection to a source electrode, and a field limiting layer lower in impurity concentration than the second well region is formed in a surface layer area of the second well region which is a region facing a gate electrode through a gate insulating film.
Public/Granted literature
- US20200321462A1 SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER Public/Granted day:2020-10-08
Information query
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