Invention Grant
- Patent Title: High isolation radio frequency multiplexer
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Application No.: US16941670Application Date: 2020-07-29
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Publication No.: US11509335B2Publication Date: 2022-11-22
- Inventor: Yi Yin
- Applicant: NXP USA, INC.
- Applicant Address: US TX Austin
- Assignee: NXP USA, INC.
- Current Assignee: NXP USA, INC.
- Current Assignee Address: US TX Austin
- Main IPC: H04B1/00
- IPC: H04B1/00 ; H04B1/04 ; H04B1/16

Abstract:
A radio frequency (RF) multiplexer circuit is provided. The multiplexer includes a first circuit coupled between a first input terminal and a first output terminal. The first circuit is configured and arranged to transfer a first RF signal coupled at the first input terminal to the first output terminal as a first output signal when a first control signal is at a first logic value. The multiplexer includes a second circuit coupled between a second input terminal and the first output terminal. The second circuit is configured and arranged to transfer a second RF signal coupled at the second input terminal to the first output terminal as a second output signal having a gain higher than the gain of the second RF signal when the first control signal is at a second logic value.
Public/Granted literature
- US20220038121A1 HIGH ISOLATION RADIO FREQUENCY MULTIPLEXER Public/Granted day:2022-02-03
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