- Patent Title: Semiconductor device and method of forming the semiconductor device
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Application No.: US16509433Application Date: 2019-07-11
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Publication No.: US11515197B2Publication Date: 2022-11-29
- Inventor: Shih-Wei Peng , Wei-Cheng Lin , Jiann-Tyng Tzeng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT Law
- Agent Anthony King
- Main IPC: H01L21/74
- IPC: H01L21/74 ; H01L21/762 ; H01L21/84 ; H01L27/12 ; H01L29/66 ; H01L23/522 ; H01L21/768 ; H01L23/48
Abstract:
A semiconductor device includes: a substrate; an ion-implanted silicon layer disposed in the substrate; a first insulator layer disposed over the ion-implanted silicon layer; an active device disposed over the first insulator layer; and a conductive via configured to penetrate the first insulator layer for coupling the ion-implanted silicon layer and the active device.
Public/Granted literature
- US20210013086A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE Public/Granted day:2021-01-14
Information query
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