Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US17061141Application Date: 2020-10-01
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Publication No.: US11515257B2Publication Date: 2022-11-29
- Inventor: Takeshi Kawamura
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Main IPC: H01L23/535
- IPC: H01L23/535 ; H01L21/768 ; H01L21/8234 ; H01L23/528 ; H01L23/532 ; H01L29/78 ; H01L23/48 ; H01L21/02 ; H01L21/3105 ; H01L21/311 ; H01L21/66 ; H01L29/66 ; H01L21/285 ; H01L23/485
Abstract:
An upper surface of a plug (PL1) is formed so as to be higher than an upper surface of an interlayer insulating film (PIL) by forming the interlayer insulating film (PIL) on a semiconductor substrate (1S), completing a CMP method for forming the plug (PL1) inside the interlayer insulating film (PIL), and then, making the upper surface of the interlayer insulating film (PIL) to recede. In this manner, reliability of connection between the plug (PL1) and a wiring (W1) in a vertical direction can be ensured. Also, the wiring (W1) can be formed so as not to be embedded inside the interlayer insulating film (PIL), or a formed amount by the embedding can be reduced.
Public/Granted literature
- US20210020572A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2021-01-21
Information query
IPC分类:
