Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US17173539Application Date: 2021-02-11
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Publication No.: US11515389B2Publication Date: 2022-11-29
- Inventor: Hae Jung Park
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2020-0117593 20200914
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/06 ; H01L29/78 ; H01L29/423 ; H01L21/768 ; H01L21/285 ; H01L29/49

Abstract:
A semiconductor device including: a semiconductor substrate including an active region; a plurality of conductive structures formed over the semiconductor substrate; an isolation layer filling a space between the conductive structures and having an opening that exposes the active region between the conductive structures; a pad formed in a bottom portion of the opening and in contact with the active region; a plug liner formed conformally over a sidewall of the opening and exposing the pad; and a contact plug formed over the pad inside the opening.
Public/Granted literature
- US20220085158A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2022-03-17
Information query
IPC分类: