The present application discloses a method for fabricating a semiconductor device with a programmable feature such as anti-fuse The method includes forming a semiconductor fin on a buried insulating layer; forming a dummy gate structure on the semiconductor fin; forming a top insulating layer over the semiconductor fin and covering the dummy gate structure; removing the dummy gate structure and concurrently forming a first trench in the top insulating layer; performing an etch process in the first trench to form a tapered pit separating the semiconductor fin; forming a first insulating layer to completely fill the first trench and the tapered pit; and replacing the semiconductor fin with first conductive blocks.