Invention Grant
- Patent Title: Semiconductor device with gate stack
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Application No.: US17074112Application Date: 2020-10-19
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Publication No.: US11515422B2Publication Date: 2022-11-29
- Inventor: Che-Cheng Chang , Chih-Han Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/417 ; H01L29/423 ; H01L29/66 ; H01L21/28
Abstract:
A semiconductor device is provided. The semiconductor device includes a gate stack over a semiconductor substrate. The gate stack has a conductive structure and a gate dielectric layer, and a top of the gate dielectric layer is higher than a top of the conductive structure. The semiconductor device also includes a protection element over the gate stack. The semiconductor device further includes a spacer extending along a side surface of the protection element and a sidewall of the gate stack.
Public/Granted literature
- US20210036157A1 SEMICONDUCTOR DEVICE WITH GATE STACK Public/Granted day:2021-02-04
Information query
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