Invention Grant
- Patent Title: Light emitting device
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Application No.: US16823734Application Date: 2020-03-19
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Publication No.: US11515451B2Publication Date: 2022-11-29
- Inventor: Se Hee Oh , Jae Kwon Kim , Jong Kyu Kim , Hyun A Kim , Joon Sup Lee
- Applicant: SEOUL VIOSYS CO., LTD.
- Applicant Address: KR Gyeonggi-do
- Assignee: SEOUL VIOSYS CO., LTD.
- Current Assignee: SEOUL VIOSYS CO., LTD.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Burris Law, PLLC
- Priority: KR10-2017-0126242 20170928,KR10-2018-0107215 20180907
- Main IPC: H01L33/46
- IPC: H01L33/46 ; H01L23/00 ; H01L33/10 ; H01L33/40 ; H01L33/48

Abstract:
A light emitting diode chip having improved light extraction efficiency is provided. The light emitting diode chip includes a substrate, a first conductivity type semiconductor layer, a mesa, a side coating layer, and a reflection structure. The first conductivity type semiconductor layer is disposed on the substrate. The mesa includes an active layer and a second conductivity type semiconductor layer. The mesa is disposed on a partial region of the first conductivity type semiconductor layer to expose an upper surface of the first conductivity type semiconductor layer along an edge of the first conductivity type semiconductor layer. The side coating layer(s) covers a side surface of the mesa. The reflection structure is spaced apart from the side coating layer(s) and disposed on the exposed first conductivity type semiconductor layer.
Public/Granted literature
- US20200220049A1 LIGHT EMITTING DIODE CHIP Public/Granted day:2020-07-09
Information query
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