Invention Grant
- Patent Title: Deep HOMO (highest occupied molecular orbital) emitter device structures
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Application No.: US16596948Application Date: 2019-10-09
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Publication No.: US11515482B2Publication Date: 2022-11-29
- Inventor: Vadim Adamovich , Eric A. Margulies , Pierre-Luc T. Boudreault
- Applicant: Universal Display Corporation
- Applicant Address: US NJ Ewing
- Assignee: Universal Display Corporation
- Current Assignee: Universal Display Corporation
- Current Assignee Address: US NJ Ewing
- Agency: Duane Morris LLP
- Main IPC: H01L51/00
- IPC: H01L51/00 ; C09K11/06 ; H01L51/50

Abstract:
Embodiments of the disclosed subject matter provide an organic light emitting diode (OLED) having an anode, a cathode, an emissive layer disposed between the anode and the cathode, and a hole blocking layer disposed between the emissive and the cathode. The emissive layer may include a phosphorescent dopant, where the phosphorescent dopant has an emission in 0.5% doped PMMA (Poly(methyl methacrylate)) thin film with a peak maximum wavelength that is greater than or equal to 600 nm at room temperature. The energy of a highest occupied molecular orbital (HOMO) of the phosphorescent dopant may be lower than or equal to −5.1 eV, and the energy of the HOMO of the hole blocking layer is at least 0.1 eV lower than the energy of the HOMO of the phosphorescent dopant.
Information query
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