Invention Grant
- Patent Title: Capacitor discharge
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Application No.: US17148246Application Date: 2021-01-13
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Publication No.: US11515805B2Publication Date: 2022-11-29
- Inventor: Laurent Gonthier
- Applicant: STMicroelectronics LTD
- Applicant Address: HK Kowloon
- Assignee: STMicroelectronics LTD
- Current Assignee: STMicroelectronics LTD
- Current Assignee Address: HK Kowloon
- Agency: Crowe & Dunlevy
- Priority: FR2000558 20200121
- Main IPC: H02M7/155
- IPC: H02M7/155 ; H02J7/00 ; H02M1/42 ; H02J7/34

Abstract:
A capacitive element has its terminals coupled together by two thyristors electrically in antiparallel. The discharge of the capacitive element is controlled by the application of a gate current to one thyristor of the two thyristors which is in a reverse-biased state in response to a voltage stored across the terminals of the capacitive element. The reverse-biased thyristor responds to the applied gate current by passing a leakage current to discharge the stored voltage.
Public/Granted literature
- US20210226553A1 CAPACITOR DISCHARGE Public/Granted day:2021-07-22
Information query
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