Invention Grant
- Patent Title: Pedestal for supporting a seed for SiC single crystal growth which includes a gas-permeable region of reduced thickness
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Application No.: US16512669Application Date: 2019-07-16
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Publication No.: US11519096B2Publication Date: 2022-12-06
- Inventor: Shunsuke Noguchi
- Applicant: SHOWA DENKO K.K.
- Applicant Address: JP Tokyo
- Assignee: SHOWA DENKO K.K.
- Current Assignee: SHOWA DENKO K.K.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JPJP2018-135092 20180718
- Main IPC: C30B35/00
- IPC: C30B35/00 ; C30B25/12 ; C23C16/458 ; C23C16/32 ; C30B29/36
Abstract:
A pedestal 103 of the present invention is a pedestal 103 for a seed 102 for crystal growth, in which one main surface 103a to which the seed 102 adheres is flat, and the pedestal has a gas-permeable region 106 which a thickness from the one main surface 103a that is formed to be locally thin.
Public/Granted literature
- US20200024769A1 PEDESTAL, SiC SINGLE CRYSTAL MANUFACTURING APPARATUS, AND SiC SINGLE CRYSTAL MANUFACTURING METHOD Public/Granted day:2020-01-23
Information query
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