Invention Grant
- Patent Title: Memory controller with read error handling
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Application No.: US17352246Application Date: 2021-06-18
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Publication No.: US11521701B2Publication Date: 2022-12-06
- Inventor: Boxuan Cheng , Wei Tao , Weizhen Kong , Jian Cao
- Applicant: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Applicant Address: CN Wuhan
- Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Wuhan
- Agency: Bayes PLLC
- Main IPC: G11C29/42
- IPC: G11C29/42 ; H03M13/11

Abstract:
In certain aspects, a controller for controlling a memory device includes a memory and a processor. The memory is configured to store instructions. The processor is coupled to the memory and configured to execute the instructions to perform a process including receiving data describing a read failure of a set of error handling mechanisms, where the read failure indicates that the set of error handling mechanisms handles a read error on a block of the memory device and fails to read data stored in the block; and responsive to the read failure of the set of error handling mechanisms, performing a memory test on the block to determine whether the block malfunctions.
Public/Granted literature
- US20220319624A1 MEMORY CONTROLLER WITH READ ERROR HANDLING Public/Granted day:2022-10-06
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