Invention Grant
- Patent Title: Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
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Application No.: US17479554Application Date: 2021-09-20
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Publication No.: US11521848B2Publication Date: 2022-12-06
- Inventor: Yukinori Aburatani , Naofumi Ohashi , Tetsuo Yamamoto
- Applicant: Kokusai Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Kokusai Electric Corporation
- Current Assignee: Kokusai Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Volpe Koenig
- Priority: JPJP2021-045271 20210318
- Main IPC: H01L21/683
- IPC: H01L21/683 ; H01L21/02 ; H01L21/67
Abstract:
There is provided technique that includes (a) adsorbing a first adsorption inhibitor to a first portion of a substrate in a first process chamber by heating the substrate to a first temperature and supplying the first adsorption inhibitor; (b) after (a), forming a film on a second portion of the substrate, where the first adsorption inhibitor is not adsorbed, by heating the substrate to a second temperature higher than the first temperature and supplying a processing gas; and (c) after (b), removing the first adsorption inhibitor adsorbed to the substrate by heating the substrate to a third temperature higher than the second temperature.
Public/Granted literature
- US20220301864A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM Public/Granted day:2022-09-22
Information query
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