Invention Grant
- Patent Title: Pattern formation method and method of manufacturing semiconductor device
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Application No.: US17010021Application Date: 2020-09-02
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Publication No.: US11521855B2Publication Date: 2022-12-06
- Inventor: Ryosuke Yamamoto , Koji Asakawa , Ayaka Suko
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JPJP2020-046975 20200317
- Main IPC: H01L21/027
- IPC: H01L21/027 ; H01L21/02 ; G03F7/00
Abstract:
A pattern formation method includes forming an organic film on a substrate, processing the organic film to form an organic film pattern, exposing the organic film pattern to an organic gas, and exposing the organic film pattern to a metal-containing gas, and after (i) exposing the organic film pattern to the organic gas and (ii) exposing the organic film pattern to the metal-containing gas, treating the organic film pattern with an oxidizing agent.
Public/Granted literature
- US20210296117A1 PATTERN FORMATION METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2021-09-23
Information query
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