Invention Grant
- Patent Title: Carrier spacer and method of manufacturing semiconductor device
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Application No.: US17013160Application Date: 2020-09-04
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Publication No.: US11521875B2Publication Date: 2022-12-06
- Inventor: Masashi Osaka
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JPJP2019-218603 20191203
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/673 ; B65G49/07

Abstract:
A carrier spacer includes an annular main body, a first tapered part formed on an inner peripheral part of a front surface of the main body, a second tapered part formed on the inner peripheral part of a reverse surface of the main body, a flat surface formed on the outer peripheral side of the first tapered part on the front surface of the main body and holding the reverse surface of the outer peripheral part of a semiconductor wafer, a peripheral edge part formed on the outer peripheral side of the flat surface of the main body and provided with a step having a height position higher than a height position of the flat surface, an arcuate cutout part formed from the peripheral edge part to the flat surface of the main body, and a pair of handles protruding from the peripheral edge part toward the outer peripheral side.
Public/Granted literature
- US20210166961A1 CARRIER SPACER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2021-06-03
Information query
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