Invention Grant
- Patent Title: Method and system of operating a bi-directional double-base bipolar junction transistor (B-TRAN)
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Application No.: US17537726Application Date: 2021-11-30
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Publication No.: US11522051B2Publication Date: 2022-12-06
- Inventor: Alireza Mojab , Daniel Brdar , Ruiyang Yu
- Applicant: IDEAL POWER INC.
- Applicant Address: US TX Austin
- Assignee: IDEAL POWER INC.
- Current Assignee: IDEAL POWER INC.
- Current Assignee Address: US TX Austin
- Agency: Dickinson Wright, PLLC
- Agent Mark E. Scott
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H03K17/082 ; H01L29/747 ; H01L29/732

Abstract:
Operating a bi-directional double-base bipolar junction transistor (B-TRAN). One example is a method comprising: conducting a first load current from an upper terminal of the power module to an upper collector-emitter of the transistor, through the transistor, and from a lower collector-emitter to a lower terminal of the power module; and then responsive assertion of a first interrupt signal, interrupting the first load current from the lower collector-emitter to the lower terminal by opening a lower-main FET and thereby commutating a first shutoff current through a lower base of the transistor to the lower terminal; and blocking current from the upper terminal to the lower terminal by the transistor.
Public/Granted literature
- US20220190115A1 METHOD AND SYSTEM OF OPERATING A BI-DIRECTIONAL DOUBLE-BASE BIPOLAR JUNCTION TRANSISTOR (B-TRAN) Public/Granted day:2022-06-16
Information query
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