Invention Grant
- Patent Title: Light emitting diode and fabrication method thereof
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Application No.: US16888966Application Date: 2020-06-01
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Publication No.: US11522107B2Publication Date: 2022-12-06
- Inventor: Cheng Meng , Yuehua Jia , Jing Wang , Chun-Yi Wu , Ching-Shan Tao , Duxiang Wang
- Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Xiamen
- Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Xiamen
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN201510097522.2 20150305,CN201711476546.4 20171229,CN201721898534.6 20171229,CN201721898549.2 20171229
- Main IPC: H01L33/40
- IPC: H01L33/40 ; H01L33/44 ; H01L33/38 ; H01L33/00 ; H01L33/42 ; H01L33/30

Abstract:
A light-emitting diode includes a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second, opposing, surface, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; a metal reflective layer disposed over the second surface; and a protective layer formed seamlessly on a surface of the metal reflective layer and on a side wall of the metal reflective layer.
Public/Granted literature
- US20200295231A1 Light Emitting Diode and Fabrication Method Thereof Public/Granted day:2020-09-17
Information query
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