Invention Grant
- Patent Title: Isolation circuit between power domains
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Application No.: US17115436Application Date: 2020-12-08
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Publication No.: US11526647B2Publication Date: 2022-12-13
- Inventor: Chi-Yu Lu , Ting-Wei Chiang , Hui-Zhong Zhuang , Jerry Chang Jui Kao , Pin-Dai Sue , Jiun-Jia Huang , Yu-Ti Su , Wei-Hsiang Ma
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G06F30/394
- IPC: G06F30/394 ; G03F1/70 ; G03F1/36 ; G06F30/398

Abstract:
An integrated circuit includes a first type-one transistor, a second type-one transistor, a first type-two transistor, a second type-two transistor, a third type-one transistor, a fourth type-one transistor, and a fifth type-one transistor. The first type-one transistor has a gate configured to have a first supply voltage of a first power supply. The first type-two transistor has a gate configured to have a second supply voltage of the first power supply. The first active-region of the third type-one transistor is connected with an active-region of the first type-one transistor. The second active-region and the gate of the third type-one transistor are connected together. The first active-region of the fifth type-one transistor is connected with the gate of the third type-one transistor. The second active-region of the fifth type-one transistor is configured to have a first supply voltage of a second power supply.
Public/Granted literature
- US20210089700A1 ISOLATION CIRCUIT BETWEEN POWER DOMAINS Public/Granted day:2021-03-25
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