Invention Grant
- Patent Title: Signal buffer circuit
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Application No.: US17218023Application Date: 2021-03-30
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Publication No.: US11527281B2Publication Date: 2022-12-13
- Inventor: Kenichi Watanabe , Moeha Shibuya
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G11C11/4093
- IPC: G11C11/4093 ; H01L27/108

Abstract:
Apparatuses with a signal line in a semiconductor device are described. An example apparatus includes one or more power supply voltage lines in a first conductive layer, a plurality of transistors and a signal line in a second conductive layer. Each transistor of the plurality of transistors includes an active region disposed in a substrate and a gate electrode above the active region. The signal line in the second conductive layer is below the first conductive layer and above the active regions of the plurality of transistors. The signal line is coupled to the gate electrodes of the plurality of transistors. The signal line has electrical resistance higher than electrical resistance of the power supply voltage line.
Public/Granted literature
- US20220319580A1 SIGNAL BUFFER CIRCUIT Public/Granted day:2022-10-06
Information query
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