Invention Grant
- Patent Title: Memory cell and operating method of memory cell
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Application No.: US17192762Application Date: 2021-03-04
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Publication No.: US11527288B2Publication Date: 2022-12-13
- Inventor: Jae Hyun Han
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Priority: KR10-2020-0111938 20200902
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00
Abstract:
A memory cell includes a first electrode, a second electrode, a variable resistance layer located between the first electrode and the second electrode, and a ferroelectric layer located between the variable resistance layer and the second electrode, wherein the variable resistance layer is maintained in an amorphous state during a program operation.
Public/Granted literature
- US20220068384A1 MEMORY CELL AND OPERATING METHOD OF MEMORY CELL Public/Granted day:2022-03-03
Information query
