Invention Grant
- Patent Title: Ion implanter and model generation method
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Application No.: US17191218Application Date: 2021-03-03
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Publication No.: US11527381B2Publication Date: 2022-12-13
- Inventor: Kazuhisa Ishibashi , Tetsuya Kudo , Mikio Yamaguchi
- Applicant: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
- Current Assignee: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Michael Best & Friedrich LLP
- Priority: JPJP2020-036546 20200304
- Main IPC: H01J37/317
- IPC: H01J37/317 ; H01J37/304

Abstract:
There is provided an ion implanter including a beam generation device that generates an ion beam, based on an implantation recipe, a plurality of measurement devices that measure at least one physical quantity of the ion beam, and a control device that acquires a data set including a plurality of measurement values measured by the plurality of measurement devices, and evaluates measurement validity of the at least one physical quantity of the ion beam by using a model representing a correlation between the plurality of measurement values.
Public/Granted literature
- US20210280388A1 ION IMPLANTER AND MODEL GENERATION METHOD Public/Granted day:2021-09-09
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