Invention Grant
- Patent Title: Transistor having strain-inducing anchors and a strain-enhancing suspended channel
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Application No.: US16410187Application Date: 2019-05-13
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Publication No.: US11527446B2Publication Date: 2022-12-13
- Inventor: Kangguo Cheng , Juntao Li , Julien Frougier , Ruilong Xie
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Joseph Petrokaitis
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L27/092 ; H01L29/06 ; H01L29/78 ; H01L29/10 ; H01L29/786 ; H01L29/66 ; H01L29/165 ; H01L21/02 ; H01L29/423
Abstract:
Embodiments of the invention are directed to a fabrication method that includes forming a first-region channel over a first region of a substrate, wherein the first-region channel further includes lateral sidewalls having a length (L), a first end sidewall having a first width (W1), and a second end sidewall having a second width (W2). L is greater than W1, and L is greater than W2. A first stress anchor is formed on the first end sidewall of the first-region channel, and a second stress anchor is formed on the second end sidewall of the first-region channel. The first stress anchor is configured to impart strain through the first end sidewalls to the first-region channel. The second stress anchor is configured to impart strain through the second end sidewalls to the first-region channel.
Information query
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