Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17007532Application Date: 2020-08-31
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Publication No.: US11527469B2Publication Date: 2022-12-13
- Inventor: Yuichi Sano
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JPJP2020-046190 20200317
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L25/18 ; H01L23/00

Abstract:
A semiconductor device includes: a multilayer wiring substrate including a plurality of wiring layers; a first semiconductor chip disposed on the wiring substrate; and a bonding layer bonding the first semiconductor chip to the wiring substrate. A trace formed on the wiring substrate includes a first trace width portion and a second trace width portion, a width of the first trace width portion being greater than the second trace width portion.
Public/Granted literature
- US20210296224A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-09-23
Information query
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