Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the semiconductor device
-
Application No.: US16835582Application Date: 2020-03-31
-
Publication No.: US11527471B2Publication Date: 2022-12-13
- Inventor: Kota Nakamura , Hiromi Tominaga , Junichi Murakami , Hidenori Shigeoka
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JPJP2019-082715 20190424
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L21/48 ; H01L23/31

Abstract:
A semiconductor device is a substrate inserted lead-type semiconductor device to be mounted through insertion of a plurality of lead terminals into a plurality of respective through holes of a substrate. The semiconductor device includes: an energization controller including a semiconductor element and wiring; a sealing resin to cover the energization controller; and the lead terminals each having one end side connected to the energization controller and the other end side protruding from the sealing resin. The lead terminals each have a protrusion formed on a part of the other end side protruding from the sealing resin.
Public/Granted literature
- US20200343174A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE Public/Granted day:2020-10-29
Information query
IPC分类: