Invention Grant
- Patent Title: Semiconductor device, semiconductor memory device, and semiconductor device manufacturing method
-
Application No.: US17121899Application Date: 2020-12-15
-
Publication No.: US11527478B2Publication Date: 2022-12-13
- Inventor: Mitsuo Ikeda , Daisuke Ikeno , Akihiro Kajita
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2020-049903 20200319
- Main IPC: H01L23/535
- IPC: H01L23/535 ; H01L29/45 ; H01L23/532 ; H01L21/768 ; H01L21/285
Abstract:
A semiconductor device according to an embodiment includes: a semiconductor substrate; a conductor including tungsten (W) or molybdenum (Mo); a first film provided between the conductor and the semiconductor substrate and including titanium (Ti) and silicon (Si); an insulating layer surrounding the conductor; and a second film provided between the conductor and the insulating layer, surrounding the conductor, and including titanium (Ti) and nitrogen (N). A first distance between the semiconductor substrate and an end portion of the second film on a side opposite to the semiconductor substrate is smaller than a second distance between the semiconductor substrate and an end portion of the conductor on a side opposite to the semiconductor substrate.
Public/Granted literature
- US20210296238A1 SEMICONDUCTOR DEVICE, SEMICONDUCTOR MEMORY DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2021-09-23
Information query
IPC分类:
