Invention Grant
- Patent Title: System-on-chip with ferroelectric random access memory and tunable capacitor
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Application No.: US16904717Application Date: 2020-06-18
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Publication No.: US11527542B2Publication Date: 2022-12-13
- Inventor: Sai-Hooi Yeong , Chi On Chui , Chenchen Jacob Wang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/11509
- IPC: H01L27/11509 ; H01L49/02 ; H01L27/11507 ; H01L27/11502 ; H01L27/108
Abstract:
A semiconductor device includes: a substrate; a first dielectric layer over the substrate; a memory cell over the substrate in a first region of the semiconductor device, where the memory cell includes a first ferroelectric structure in the first dielectric layer, where the first ferroelectric structure includes a first bottom electrode, a first top electrode, and a first ferroelectric layer in between; and a tunable capacitor over the substrate in a second region of the semiconductor device, where the tunable capacitor includes a second ferroelectric structure, where the second ferroelectric structure includes a second bottom electrode, a second top electrode, and a second ferroelectric layer in between, where at least a portion of the second ferroelectric structure is in the first dielectric layer.
Public/Granted literature
- US20210202511A1 SYSTEM-ON-CHIP WITH FERROELECTRIC RANDOM ACCESS MEMORY AND TUNABLE CAPACITOR Public/Granted day:2021-07-01
Information query
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