Invention Grant
- Patent Title: Stacked resistive memory with individual switch control
-
Application No.: US17229990Application Date: 2021-04-14
-
Publication No.: US11527574B2Publication Date: 2022-12-13
- Inventor: Takashi Ando , Jingyun Zhang , Pouya Hashemi , Alexander Reznicek , Choonghyun Lee
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Randy Emilio Tejeda
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L29/06 ; H01L29/423 ; H01L29/786 ; H01L45/00 ; H01L29/66 ; G06N3/063
Abstract:
A method for fabricating stacked resistive memory with individual switch control is provided. The method includes forming a first random access memory (ReRAM) device. The method further includes forming a second ReRAM device in a stacked nanosheet configuration on the first ReRAM device. The method also includes forming separate gate contacts for the first ReRAM device and the second ReRAM device.
Public/Granted literature
- US20210233960A1 STACKED RESISTIVE MEMORY WITH INDIVIDUAL SWITCH CONTROL Public/Granted day:2021-07-29
Information query
IPC分类:
