Invention Grant
- Patent Title: Microphone device with single crystal piezoelectric film and method of forming the same
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Application No.: US16722143Application Date: 2019-12-20
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Publication No.: US11527700B2Publication Date: 2022-12-13
- Inventor: You Qian , Joan Josep Giner De Haro , Rakesh Kumar
- Applicant: VANGUARD INTERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD.
- Applicant Address: SG Singapore
- Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD.
- Current Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD.
- Current Assignee Address: SG Singapore
- Agent Winston Hsu
- Main IPC: H01L41/053
- IPC: H01L41/053 ; H01L41/047 ; H01L41/08 ; H04R17/02 ; H01L41/297

Abstract:
A microphone device may include: a substrate wafer, a support member bonded to a front surface of the substrate wafer, a single-crystal piezoelectric film provided over the support member, a top electrode and a bottom electrode. The single-crystal piezoelectric film may have a first surface and an opposing second surface. The top electrode may be arranged adjacent to the first surface of the single-crystal piezoelectric film. The bottom electrode may be arranged adjacent to the second surface of the single-crystal piezoelectric film. The substrate wafer may have a through-hole formed therein. The through-hole of the substrate wafer may be at least substantially aligned with at least one of the top electrode and the bottom electrode.
Public/Granted literature
- US20210193899A1 MICROPHONE DEVICE AND METHOD OF FORMING A MICROPHONE DEVICE Public/Granted day:2021-06-24
Information query
IPC分类: