Invention Grant
- Patent Title: Semiconductor device comprising passive magnetoelectric transducer structure
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Application No.: US15850322Application Date: 2017-12-21
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Publication No.: US11527705B2Publication Date: 2022-12-13
- Inventor: Jan-Willem Burssens , Javier Bilbao de Mendizabal
- Applicant: Melexis Bulgaria Ltd.
- Applicant Address: BG Sofia
- Assignee: Melexis Bulgaria Ltd.
- Current Assignee: Melexis Bulgaria Ltd.
- Current Assignee Address: BG Sofia
- Agency: Workman Nydegger
- Priority: EP16206528 20161222
- Main IPC: H01L41/18
- IPC: H01L41/18 ; H01L41/12 ; H01L41/16 ; H01L41/00 ; H01L27/20 ; H01L41/311 ; H01L41/08 ; H01L41/20 ; H01L41/31 ; H01L41/47 ; H03K17/97

Abstract:
A semiconductor device comprising a passive magnetoelectric transducer structure adapted for generating a charge via mechanical stress caused by a magnetic field. The first transducer structure has a first terminal electrically connectable to the control terminal of an electrical switch, and having a second terminal electrically connectable to the first terminal of the electrical switch for providing a control signal for opening/closing the switch. The switch may be a FET. A passive magnetic switch using a magnetoelectric transducer structure. Use of a passive magnetoelectric transducer structure for opening or closing a switch without the need for an external power supply.
Public/Granted literature
- US20180182951A1 SEMICONDUCTOR DEVICE COMPRISING PASSIVE MAGNETOELECTRIC TRANSDUCER STRUCTURE Public/Granted day:2018-06-28
Information query
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