Invention Grant
- Patent Title: Auxiliary electrode transfer structure and manufacturing method for display panel
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Application No.: US16603298Application Date: 2019-06-18
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Publication No.: US11527734B2Publication Date: 2022-12-13
- Inventor: Chunhsiung Fang
- Applicant: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Applicant Address: CN Shenzhen
- Assignee: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Current Assignee: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Current Assignee Address: CN Shenzhen
- Agency: PV IP PC
- Agent Wei Te Chung; Ude Lu
- Priority: CN201910352512.7 20190429
- International Application: PCT/CN2019/091630 WO 20190618
- International Announcement: WO2020/220442 WO 20201105
- Main IPC: H01L51/00
- IPC: H01L51/00 ; H01L51/52

Abstract:
The present invention discloses an auxiliary electrode transfer structure and a manufacturing method for a display panel. The auxiliary electrode transfer structure includes a transparent base layer; a light-to-heat transformation layer disposed above the transparent base layer; and an auxiliary electrode disposed above the light-to-heat transformation layer; a laser mechanism configured to form laser, wherein the laser penetrates the transparent base layer to the light-to-heat transformation layer.
Public/Granted literature
- US20210336186A1 AUXILIARY ELECTRODE TRANSFER STRUCTURE AND MANUFACTURING METHOD FOR DISPLAY PANEL Public/Granted day:2021-10-28
Information query
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