- Patent Title: Neuron circuit using p-n-p-n diode without external bias voltages
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Application No.: US16896560Application Date: 2020-06-09
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Publication No.: US11531872B2Publication Date: 2022-12-20
- Inventor: Sang Sig Kim , Kyoung Ah Cho , Young Soo Park , Doo Hyeok Lim , Sol A Woo
- Applicant: Korea University Research and Business Foundation
- Applicant Address: KR Seoul
- Assignee: Korea University Research and Business Foundation
- Current Assignee: Korea University Research and Business Foundation
- Current Assignee Address: KR Seoul
- Agency: NSIP Law
- Priority: KR10-2019-0145945 20191114
- Main IPC: G06N3/063
- IPC: G06N3/063 ; H01L29/74 ; H03K17/72 ; H01L29/749

Abstract:
The present disclosure relates to a novel neuron circuit using a p-n-p-n diode to realize small size and low power consumption. The neuron circuit according to one embodiment of the present disclosure may generate potential by charging current input from synapses through a capacitor. In this case, when the generated potential exceeds a critical value, the neuron circuit may generate and output a spike voltage corresponding to the generated potential using a p-n-p-n diode connected to the capacitor.
Public/Granted literature
- US20210150320A1 NEURON CIRCUIT USING P-N-P-N DIODE WITHOUT EXTERNAL BIAS VOLTAGES Public/Granted day:2021-05-20
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