Invention Grant
- Patent Title: Self-reference sensing for memory cells
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Application No.: US17097749Application Date: 2020-11-13
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Publication No.: US11532345B2Publication Date: 2022-12-20
- Inventor: Riccardo Muzzetto
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G11C11/22
- IPC: G11C11/22 ; G06F13/40 ; G11C13/00

Abstract:
Methods, systems, and apparatuses for self-referencing sensing schemes are described. A cell having two transistors, or other switching components, and one capacitor, such as a ferroelectric capacitor, may be sensed using a reference value that is specific to the cell. The cell may be read and sampled via one access line, and the cell may be used to generate a reference voltage and sampled via another access line. For instance, a first access line of a cell may be connected to one read voltage while a second access line of the cell is isolated from a voltage source; then the second access line may be connected to another read voltage while the first access line is isolate from a voltage source. The resulting voltages on the respective access lines may be compared to each other and a logic value of the cell determined from the comparison.
Public/Granted literature
- US20210134342A1 SELF-REFERENCE SENSING FOR MEMORY CELLS Public/Granted day:2021-05-06
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