Invention Grant
- Patent Title: Interconnect structure, semiconductor structure including interconnect structure and method for forming the same
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Application No.: US16883929Application Date: 2020-05-26
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Publication No.: US11532580B2Publication Date: 2022-12-20
- Inventor: Jung-Chou Tsai , Fong-Yuan Chang , Po-Hsiang Huang , Chin-Chou Liu , Yi-Kan Cheng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT Law
- Agent Anthony King
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L23/00 ; H01L23/522 ; H01L25/065
Abstract:
An interconnect structure includes a plurality of first pads, a plurality of second pads, a plurality of first conductive lines in a first layer, a plurality of second conductive lines in a second layer, and a plurality of nth conductive lines in an nth layer. The first pads and the second pads respectively are grouped into a first, a second and an nth group. Each of the first pads in first group is connected to one of the second pads in the first group by one of the first conductive lines. Each of the first pads in the second group is connected to one of the second pads in the second group by one of the second conductive lines. Each of the first pads in the nth group is connected to one of the second pads in the nth group by one of the nth conductive lines.
Public/Granted literature
Information query
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