Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
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Application No.: US16818515Application Date: 2020-03-13
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Publication No.: US11532590B2Publication Date: 2022-12-20
- Inventor: Hiroyuki Masumoto
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JPJP2019-076289 20190412
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L25/18 ; H01L23/049 ; H01L23/373 ; H01L21/48 ; H01L25/00 ; H01L25/07
Abstract:
A semiconductor device includes an insulation substrate including a circuit pattern, semiconductor chips mounted on the circuit pattern, a wire connecting between the semiconductor chips and between the semiconductor chip and the circuit pattern, and a conductive material serving as a conductor formed integrally with the wire.
Public/Granted literature
- US20200328178A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2020-10-15
Information query
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