Invention Grant
- Patent Title: Power supply circuit for measuring transient thermal resistances of semiconductor device
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Application No.: US16739289Application Date: 2020-01-10
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Publication No.: US11532998B2Publication Date: 2022-12-20
- Inventor: Naoki Nishimura , Masashi Fukai
- Applicant: Sansha Electric Manufacturing Co., Ltd.
- Applicant Address: JP Osaka
- Assignee: Sansha Electric Manufacturing Co., Ltd.
- Current Assignee: Sansha Electric Manufacturing Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: Renner, Otto, Boisselle & Sklar, LLP
- Priority: JPJP2019-22601 20190212
- Main IPC: H02M7/5395
- IPC: H02M7/5395 ; G01R31/26 ; H01L23/58 ; H02M1/32 ; H02M7/5387

Abstract:
A power supply circuit for measuring transient thermal resistances includes an inverter circuit provided on a primary side of a transformer and controlled by a PWM signal, a rectifier circuit provided on a secondary side of the transformer and including a DC reactor, and a control circuit controlling the PWM signal so as to output a pulsed output current from the rectifier circuit to a semiconductor device to be measured. The control circuit sets a first PWM frequency at rising timing of the output current, and sets a second PWM frequency when a predetermined time t1 elapses from the rising timing of the output current. The control circuit sets the first PWM frequency higher than the second PWM frequency.
Public/Granted literature
- US20200259424A1 POWER SUPPLY CIRCUIT FOR MEASURING TRANSIENT THERMAL RESISTANCES OF SEMICONDUCTOR DEVICE Public/Granted day:2020-08-13
Information query
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