Invention Grant
- Patent Title: Semiconductor integrated circuit
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Application No.: US17472318Application Date: 2021-09-10
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Publication No.: US11533051B2Publication Date: 2022-12-20
- Inventor: Eriko Shigesawa , Akio Ogura
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Tokyo; JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Allen & Overy LLP
- Priority: JPJP2020-194339 20201124
- Main IPC: H03K17/687
- IPC: H03K17/687

Abstract:
According to one embodiment, a semiconductor integrated circuit includes the following configuration. A first transistor has a source and a gate coupled to first and second voltage nodes respectively. A second transistor has a source and a gate coupled to third and second voltage nodes respectively. A third transistor is coupled between the first and second transistors. A fourth transistor has a source coupled to the first voltage node and a gate coupled to a first output node between the second and third transistors. A fifth transistor has a source coupled to the third voltage node, a gate coupled to the gate of the fourth transistor and a drain coupled to a drain of the fourth transistor. A sixth transistor has a gate supplied with a voltage output from a second output node between the fourth and fifth transistors and a source coupled to the first voltage node.
Public/Granted literature
- US20220166428A1 SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2022-05-26
Information query
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