Memory device that executes a read operation based on a self-reference scheme
Abstract:
According to one embodiment, a device includes a sense amplifier sensing a first signal based on first data in a cell and a second signal based on second data in the cell. The sense amplifier includes a current mirror causing a first current to flow in a first node connected to the cell and a second current in a second node based on a potential of the first node, a first switch connected to the second node and a third node, a transistor including a terminal connected to the second node and a gate connected to the third node, a second switch connected to the second node and a fourth node, and a circuit connected to the second and third node and causing a third current to flow in the second node based on a potential of the third node.
Public/Granted literature
Information query
Patent Agency Ranking
0/0