Invention Grant
- Patent Title: Two-stage flash programming for embedded systems
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Application No.: US17409111Application Date: 2021-08-23
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Publication No.: US11538544B2Publication Date: 2022-12-27
- Inventor: Gil Golov
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Greenberg Traurig
- Main IPC: G06F11/22
- IPC: G06F11/22 ; G11C29/12 ; G06F8/61 ; G11C11/56 ; G06F11/07 ; G11C16/20 ; G11C29/08

Abstract:
Disclosed are devices and methods for improving the initialization of devices housing memories. In one embodiment, a method is disclosed comprising writing a test program to a first region of a memory device during production of the memory device; executing a self-test program in response to detecting a first power up of the memory device, the self-test program stored within the test program; and retrieving and installing an image from a remote data source in response to detecting a subsequent power up of the memory device, the retrieving performed by the test program.
Public/Granted literature
- US20210383884A1 Two-Stage Flash Programming for Embedded Systems Public/Granted day:2021-12-09
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