A semiconductor device is provided. The semiconductor device comprises an inductor in a far back end of line layer and a capacitor adjacent to and electrically coupled with the inductor. The capacitor comprises a first electrode layer arranged over sidewalls and a bottom surface of a via in a first insulating layer A dielectric layer is provided over the first electrode layer. A second electrode layer is provided over the dielectric layer and a metal fill layer is provided over the second electrode layer. The metal fill layer has a top surface at least level with a top surface of the first insulating layer.