An image sensing device is provided to include a semiconductor substrate configured to include a photoelectric conversion element that generates photocharges in response to light incident to the photoelectric conversion element, a plurality of microlenses disposed over the semiconductor substrate and configured to allow the incident light to converge upon the photoelectric conversion element, and a polarization structure disposed between the semiconductor substrate and the microlenses and configured to transmit light of a polarization oriented in a specific direction to the photoelectric conversion element, wherein the polarization structure includes one or more air layers.