Invention Grant
- Patent Title: Method for forming stressor, semiconductor device having stressor, and method for forming the same
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Application No.: US16725501Application Date: 2019-12-23
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Publication No.: US11538938B2Publication Date: 2022-12-27
- Inventor: Che-Wei Yang , Hao-Hsiung Lin , Samuel C. Pan
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. , NATIONAL TAIWAN UNIVERSITY
- Applicant Address: TW Hsinchu; TW Taipei
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- Current Assignee Address: TW Hsinchu; TW Taipei
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/10 ; H01L29/267 ; H01L29/66 ; H01L21/02 ; H01L21/265 ; H01L21/324 ; H01L29/06 ; H01L29/36
Abstract:
A semiconductor device includes a semiconductor fin protruding from a substrate, a gate electrode over the semiconductor fin, a gate insulating layer between the semiconductor fin and the gate electrode, source and drain regions disposed on opposite sides of the semiconductor fin, a first stressor formed in a region between the source and drain regions. The first stressor including one material selected from the group consisting of He, Ne, and Ga.
Information query
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