Invention Grant
- Patent Title: Film forming system and method for forming film on substrate
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Application No.: US16246285Application Date: 2019-01-11
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Publication No.: US11542592B2Publication Date: 2023-01-03
- Inventor: Masato Shinada , Naoki Watanabe , Tetsuya Miyashita , Hiroaki Chihaya
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Fenwick & West LLP
- Priority: JPJP2018-022894 20180213
- Main IPC: C23C14/22
- IPC: C23C14/22 ; C23C14/35 ; C23C14/50 ; H01J37/34

Abstract:
A film forming system comprises a chamber, a stage, a holder, a cathode magnet, a shield, a first moving mechanism, and a second moving mechanism. The chamber provides a processing space. The stage is provided in the processing space and configured to support a substrate. The holder is configured to hold a target that is provided in the processing space. The cathode magnet is provided outside the chamber with respect to the target. The shield has a slit and is configured to block particles released from the target around the slit. The first moving mechanism is configured to move the shield between the stage and the target along a scanning direction substantially parallel to a surface of the substrate mounted on the stage. The second moving mechanism is configured to move the cathode magnet along the scanning direction.
Public/Granted literature
- US20190252165A1 FILM FORMING SYSTEM AND METHOD FOR FORMING FILM ON SUBSTRATE Public/Granted day:2019-08-15
Information query
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