Invention Grant
- Patent Title: Method for producing p-type 4H-SiC single crystal
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Application No.: US16914506Application Date: 2020-06-29
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Publication No.: US11542631B2Publication Date: 2023-01-03
- Inventor: Kazuma Eto , Tomohisa Kato , Hiromasa Suo , Yuichiro Tokuda
- Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY , SHOWA DENKO K.K. , DENSO CORPORATION
- Applicant Address: JP Tokyo; JP Tokyo; JP Aichi
- Assignee: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY,SHOWA DENKO K.K.,DENSO CORPORATION
- Current Assignee: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY,SHOWA DENKO K.K.,DENSO CORPORATION
- Current Assignee Address: JP Tokyo; JP Tokyo; JP Aichi
- Agency: Xsensus LLP
- Priority: JP2015-192724 20150930
- Main IPC: C30B23/06
- IPC: C30B23/06 ; C30B29/36 ; H01L21/02 ; C30B23/00 ; H01B1/04
Abstract:
A method for producing a p-type 4H—SiC single crystal includes sublimating a nitrided aluminum raw material and a SiC raw material. Further, there is a stacking of a SiC single crystal, which is co-doped with aluminum and nitrogen, on one surface of a seed crystal.
Public/Granted literature
- US20200325595A1 METHOD FOR PRODUCING P-TYPE 4H-SIC SINGLE CRYSTAL Public/Granted day:2020-10-15
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