Invention Grant
- Patent Title: Damage predicting device and damage predicting method for power semiconductor switching element, AC-DC converter, and DC-DC converter
-
Application No.: US16490624Application Date: 2018-02-16
-
Publication No.: US11543447B2Publication Date: 2023-01-03
- Inventor: Hidetoshi Ikeda , Takashi Togawa
- Applicant: Nidec Corporation
- Applicant Address: JP Kyoto
- Assignee: Nidec Corporation
- Current Assignee: Nidec Corporation
- Current Assignee Address: JP Kyoto
- Agency: Keating & Bennett
- Priority: JPJP2017-049158 20170314
- International Application: PCT/JP2018/005532 WO 20180216
- International Announcement: WO2018/168328 WO 20180920
- Main IPC: G01R31/26
- IPC: G01R31/26 ; H02M1/32 ; H02M3/155 ; H02M7/12 ; H03K17/16 ; H02M1/42
Abstract:
A damage predicting device of a power semiconductor switching element includes a resistor connected to a gate of the power semiconductor switching element, and control circuitry. The control circuitry compares a detection voltage matching a voltage generated between two ends of the resistor and a reference voltage, and predicts that predetermined damage has been accumulated in a gate insulating layer in the power semiconductor switching element when the detection voltage exceeds the reference voltage.
Public/Granted literature
Information query
