Invention Grant
- Patent Title: Writer with laterally graded spin layer MsT
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Application No.: US17691869Application Date: 2022-03-10
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Publication No.: US11545175B2Publication Date: 2023-01-03
- Inventor: Ying Liu , Shohei Kawasaki , Wenyu Chen , Yuhui Tang
- Applicant: Headway Technologies, Inc.
- Applicant Address: US CA Milpitas
- Assignee: Headway Technologies, Inc.
- Current Assignee: Headway Technologies, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: G11B5/31
- IPC: G11B5/31 ; G11B5/235 ; G11B5/23 ; G11B5/127 ; G11B5/39 ; G11B5/00

Abstract:
A method of forming a spin transfer torque reversal assisted magnetic recording (STRAMR) writer is disclosed wherein a spin torque oscillator (STO) has a flux guiding layer (FGL) wherein magnetization flips to a direction substantially opposing the write gap (WG) field when sufficient current (IB) density is applied across the STO between a trailing shield and main pole (MP) thereby enhancing the MP write field. The FGL has a center portion with a larger magnetization saturation×thickness (MsT) than in FGL outer portions proximate to STO sidewalls. Accordingly, lower IB density is necessary to provide a given amount of FGL magnetization flipping and there is reduced write bubble fringing compared with writers having a FGL with uniform MsT. Lower MsT is achieved by partially oxidizing FGL outer portions. In some embodiments, there is a gradient in outer FGL portions where MsT increases with increasing distance from FGL sidewalls.
Public/Granted literature
- US20220199113A1 Writer with Laterally Graded Spin Layer MsT Public/Granted day:2022-06-23
Information query
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